au.\*:("WADE, H. H")
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Feature size effects on selective area epitaxy of InGaAsCOTTA, M. A; HARRIOTT, L. R; WANG, Y. L et al.Applied physics letters. 1992, Vol 61, Num 16, pp 1936-1938, issn 0003-6951Article
Scalpel proof-of-concept system : Preliminary lithography resultsWASKIEWICZ, W. K; BIDDICK, C. J; FELKER, J. A et al.SPIE proceedings series. 1997, pp 255-263, isbn 0-8194-2462-5Conference Paper
Nanofabrication on InP using focused ion beam lithography and Cl2 etching : process and controlCHU, C. H; WANG, Y. L; HSIEH, Y. F et al.Materials chemistry and physics. 1993, Vol 33, Num 1-2, pp 158-164, issn 0254-0584Article
Structural damage induced by Ga+ focused ion beam implantation in (OO1) SiCHU, C. H; HSIEH, Y. F; HARRIOTT, L. R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 6, pp 3451-3455, issn 0734-211XConference Paper
The SCattering with Angular Limitation in Projection Electron-beam Lithography (SCALPEL) systemLIDDLE, J. A; BERGER, S. D; CUSTY, J et al.Japanese journal of applied physics. 1995, Vol 34, Num 12B, pp 6663-6671, issn 0021-4922, 1Conference Paper
FeGe liquid metal ion source for maskless isolation implants in InPCHU, C. H; BARR, D. L; HARRIOTT, L. R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1273-1276, issn 0734-211XConference Paper